| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of programming a memory device of a one-time programmable type and an integrated circuit incorporating the memory device. <P>SOLUTION: The integrated circuit includes a memory device DM of an irreversibly electrically programmable type provided with at least a memory cell CEL having a dielectric zone C disposed between a first electrode EC1 and a second electrode EC2 electrically coupled to an access circuit including at least one access transistor TR. The memory device further includes an auxiliary transistor (TRX) electrically coupled between the first electrode and a first power supply terminal, wherein an auxiliary control electrode of the auxiliary transistor is controlled in such a way as to be enabled when the access transistor is enabled, and the auxiliary transistor is arranged in such a way as to exhibit a lower saturation current than the saturation current of the access circuit. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
