发明名称 SEMICONDUCTOR APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a means of preventing a circuit improper operation by suppressing the generation of a displacement current charging and discharging parasitic capacitance due to a dv/dt surge. SOLUTION: A first lead frame 3a is disposed so as to correspond to a low-potential reference circuit section LV and a second lead frame 3b is disposed so as to correspond to a high-potential reference circuit section HV, whereby a part of an insulating substrate 2, positioned below the low-potential reference circuit section LV is brought into a state where the part is held at the same potential between the low-potential reference circuit section LV and a first lead frame 3a and a part of the insulating substrate 2, positioned below the high-potential reference circuit section HV is brought into a state where the part is held at the same potential between the high-potential reference circuit section HV and the second lead frame 3b. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009266933(A) 申请公布日期 2009.11.12
申请号 JP20080112483 申请日期 2008.04.23
申请人 DENSO CORP 发明人 YAMADA AKIRA;AKAGI NOZOMI;SHIRAKI SATOSHI
分类号 H01L27/08;H01L21/3205;H01L21/74;H01L21/76;H01L21/761;H01L21/762;H01L21/822;H01L21/8238;H01L23/52;H01L25/07;H01L25/18;H01L27/04;H01L27/092;H01L29/786 主分类号 H01L27/08
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