| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device for surely obtaining such semiconductor device as includes a silicide film having a wanted film quality. SOLUTION: The manufacturing method of the semiconductor device includes a step (process S1) for acquiring a relationship between warping of a substrate and a thermal treatment temperature when forming a silicide film on a substrate by forming a metal film on the substrate which is thermally treated, and a step of forming a silicide film by forming the metal film on the substrate and then causing the film to be subjected to a thermal treatment. The step of forming the silicide film includes a step (process S2) for measuring warping of a substrate during thermal treatment, step of acquiring warping of a substrate at the temperature of thermal treatment, based on the relationship between warping of substrate and thermal treatment temperature as well as the thermal treatment temperature of the substrate when actually warping of substrate is measured, a step (process S4) for calculating a difference between the acquired warping of substrate and the actually measured warping of substrate, a step (process S5) for determining whether the difference exceeds a predetermined value, and a step in which, if the difference exceeds the predetermined value, the thermal treatment condition is adjusted (process S8) based on the difference, and if the difference is a predetermined value or less, the thermal treatment condition is not adjusted. COPYRIGHT: (C)2010,JPO&INPIT |
