发明名称 |
Method for Producing Soi Wafer |
摘要 |
The present invention is a method for producing an SOI wafer comprising at least a step of forming an ion-implanted damaged layer by ion-implanting a neutral element electrically inactive in silicon from one surface of the base wafer or the bond wafer, in which ion-implanting in the step of forming the ion-implanted damaged layer is performed at a dosage of 1x1012 atoms/cm2 or more and less than 1x1015 atoms/cm2. As a result, there may be provided a method for producing an SOI wafer having sufficient gettering ability while the suppression of leak failure, degradation of oxide dielectric breakdown voltage or the like is provided.
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申请公布号 |
US2009280620(A1) |
申请公布日期 |
2009.11.12 |
申请号 |
US20070226264 |
申请日期 |
2007.04.23 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
YOSHIDA KAZUHIKO;MATSUMINE MASAO;TAKENO HIROSHI |
分类号 |
H01L21/782 |
主分类号 |
H01L21/782 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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