发明名称 Heat radiation structure of semiconductor device, and manufacturing method thereof
摘要 The invention of the present application provides a heat radiation structure of a semiconductor device, comprising a substrate having, on a surface thereof, a first area on which the semiconductor device is mounted, and a second area which surrounds the first area, and the semiconductor device which has a first surface and a second surface opposite to the first surface and is formed with a plurality of terminals provided on the first surface, wherein the semiconductor device is mounted on the substrate in such a manner that the first surface is opposite to the surface of the substrate, and wherein a first heat radiating film is formed on the second area of the substrate, and a second heat radiating film is formed on the second surface of the semiconductor device with being spaced away from the first heat radiating film.
申请公布号 US2009280604(A1) 申请公布日期 2009.11.12
申请号 US20090458529 申请日期 2009.07.15
申请人 OKI SEMICONDUCTOR CO., LTD. 发明人 NOGUCHI TAKASHI
分类号 H01L21/58;H01L23/12;H01L21/56;H01L23/34;H01L23/36;H01L23/373;H01L23/40 主分类号 H01L21/58
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