| 摘要 |
The present invention relates to a ferroelectric material used as a component of an electronic and electrical material and a ferroelectric layer formation method using the same. In one embodiment of the present invention, a metallic material is added to an existing ferroelectric material to form a novel ferroelectric material. Such a ferroelectric material of the present invention has a very high or low value of remanent polarization, compared with existing ferroelectric materials. A ferroelectric material having a higher value of remanent polarization than existing ferroelectric materials is suitable for use as a dielectric material, and a ferroelectric material having a somewhat lower value than existing ferroelectric materials is suitable for use as a material for a ferroelectric transistor gate. |
