发明名称 |
HIGH-VOLTAGE SOLID-STATE TRANSDUCERS AND ASSOCIATED SYSTEMS AND METHODS |
摘要 |
High-voltage solid-state transducer (SST) devices and associated systems and methods are disclosed herein. An SST device in accordance with a particular embodiment of the present technology includes a carrier substrate, a first terminal, a second terminal and a plurality of SST dies connected in series between the first and second terminals. The individual SST dies can include a transducer structure having a p-n junction, a first contact and a second contact. The transducer structure forms a boundary between a first region and a second region with the carrier substrate being in the first region. The first and second terminals can be configured to receive an output voltage and each SST die can have a forward junction voltage less than the output voltage. |
申请公布号 |
US2016211430(A1) |
申请公布日期 |
2016.07.21 |
申请号 |
US201615082764 |
申请日期 |
2016.03.28 |
申请人 |
Micron Technology, Inc. |
发明人 |
Schubert Martin F. |
分类号 |
H01L33/62;H01L33/38;H01L33/00;H01L33/32;H01L31/02;H01L31/0304 |
主分类号 |
H01L33/62 |
代理机构 |
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代理人 |
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主权项 |
1. A solid-state transducer (SST) device, comprising:
a carrier substrate; a first terminal; a second terminal, wherein the first and second terminals are positioned to couple to a power supply having an output voltage; and a plurality of SST dies electrically connected in series between the first and second terminals, wherein individual SST dies have a forward junction voltage less than the output voltage, and wherein the individual SST dies comprise—
a transducer structure having a p-n junction, the transducer structure forming a boundary between a first region and a second region, with the carrier substrate being in the first region;a first contact in the first region and electrically connected to the p-n junction; anda second contact electrically connected to the p-n junction. |
地址 |
Boise ID US |