发明名称 HIGH-VOLTAGE SOLID-STATE TRANSDUCERS AND ASSOCIATED SYSTEMS AND METHODS
摘要 High-voltage solid-state transducer (SST) devices and associated systems and methods are disclosed herein. An SST device in accordance with a particular embodiment of the present technology includes a carrier substrate, a first terminal, a second terminal and a plurality of SST dies connected in series between the first and second terminals. The individual SST dies can include a transducer structure having a p-n junction, a first contact and a second contact. The transducer structure forms a boundary between a first region and a second region with the carrier substrate being in the first region. The first and second terminals can be configured to receive an output voltage and each SST die can have a forward junction voltage less than the output voltage.
申请公布号 US2016211430(A1) 申请公布日期 2016.07.21
申请号 US201615082764 申请日期 2016.03.28
申请人 Micron Technology, Inc. 发明人 Schubert Martin F.
分类号 H01L33/62;H01L33/38;H01L33/00;H01L33/32;H01L31/02;H01L31/0304 主分类号 H01L33/62
代理机构 代理人
主权项 1. A solid-state transducer (SST) device, comprising: a carrier substrate; a first terminal; a second terminal, wherein the first and second terminals are positioned to couple to a power supply having an output voltage; and a plurality of SST dies electrically connected in series between the first and second terminals, wherein individual SST dies have a forward junction voltage less than the output voltage, and wherein the individual SST dies comprise— a transducer structure having a p-n junction, the transducer structure forming a boundary between a first region and a second region, with the carrier substrate being in the first region;a first contact in the first region and electrically connected to the p-n junction; anda second contact electrically connected to the p-n junction.
地址 Boise ID US