SEMICONDUCTOR DEVICE WITH METAL GATE AND HIGH-K DIELECTRIC LAYER, CMOS INTEGRATED CIRCUIT, AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device includes a gate dielectric layer over a substrate, a metal layer over the gate dielectric layer, a capping layer over the metal layer, wherein the capping layer includes a plurality of dipole forming elements concentrated at the interface between the metal layer and the capping layer.