发明名称 PATTERN FORMATION METHOD AND RESIN COMPOSITION FOR FINE PATTERN FORMATION
摘要 <P>PROBLEM TO BE SOLVED: To provide a pattern formation method capable of forming a fine pattern simply and effectively. <P>SOLUTION: The pattern formation method for forming a prescribed pattern on a substrate includes: (1) a step of obtaining a first resist pattern formed with part of the prescribed pattern; (2) a step of forming a mask layer for a first etching, which is provided with a first resist pattern and a first coating layer coating the first resist pattern; (3) a step of etching the substrate; (4) a step of obtaining a second resist pattern, in which at least part of the pattern of the remaining of the prescribed pattern is formed; (5) a step of forming a mask layer for a second etching provided with a second resist pattern and a second coating layer for coating the second resist pattern; (6) and a step of performing further etching process. The processes (4) to (6) are repeated one time or more in this order. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009265505(A) 申请公布日期 2009.11.12
申请号 JP20080117407 申请日期 2008.04.28
申请人 JSR CORP 发明人 ABE TAKEYOSHI;KAKIZAWA TOMOHIRO;NAKAMURA ATSUSHI;NAGAI TOMOKI
分类号 G03F7/40;C08F220/58;H01L21/027 主分类号 G03F7/40
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