| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a capacitor integrated in a damascene structure. <P>SOLUTION: A capacitor 25 is formed entirely within a metallization layer of the damascene structure, having therein a semiconductor device component. Preferably, the capacitor is formed within a trench, having been etched in a dielectric material of the metal layer, and the capacitor includes a first capacitor electrode 26 formed within a recess in electrical contact with the device component 16 of the metal layer. It is preferable that an insulator 30 may be formed over the first capacitor electrode together with a second capacitor electrode 27 formed over the insulator. These elements are preferably deposited conformably to the trench so as to form the recess and partially extends within the trench. A subsequently fabricated device component may be placed in electrical contact with the second capacitor electrode. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
