| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a silicon-based thin film photoelectric conversion device having high conversion efficiency by using an inexpensive film-making method such as a single chamber method. Ž<P>SOLUTION: The silicon-based thin film photoelectric conversion device comprises: a transparent substrate; a transparent conductive film layer disposed on the transparent substrate; at least one layer of p-type semiconductor layer disposed on the transparent conductive film layer; and a first photoelectric conversion unit layer produced from a crystalline silicon-based photoelectric conversion layer which is substantially intrinsic and an n-type semiconductor layer which are laminated in this order. The photoelectric conversion device is characterized in that, in a part of 100 nm thickness from the interface between the crystalline silicon-based photoelectric conversion layer which is substantially intrinsic and the p-type semiconductor layer, the concentration of a phosphorus atom is 2×10<SP>17</SP>atm/cc or less and/or the concentration of a nitrogen atom is 10<SP>17</SP>atm/cc or less. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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