| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin-film resistor element wherein the reduction in Q value of a varactor is suppressedby reducing a parasitic capacitance between a resistor and a substrate, and a manufacturing method thereof. <P>SOLUTION: The thin-film resistor element includes: a semiconductor substrate 10 including an integrated circuit 12 which has a plurality of interconnection layers laminated and has a plurality of electrode pads 14 disposed apart from each other in the uppermost layer and a passivation film 16 formed between the electrode pads 14; a secondary interconnections 18 electrically connected to the electrode pads 14; an insulating film 20 formed on the passivation film 16 and in positions between the secondary interconnections 18; and a resistor 26 formed on the insulating film 20 in a prescribed position and in a position between the secondary interconnections 18. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
