| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for making a nitride semiconductor laser which improves the uniformity of indium composition of an InGaN well layer. SOLUTION: In a process S110, the deposition of InGaN thin film of which the film thickness D<SB>w1</SB>(D<SB>W1</SB><D<SB>W0</SB>) is thinner than the film thickness D<SB>W0</SB>of the well layer is performed at a temperature T1 while supplying TMG, TMIn and NH<SB>3</SB>to a growth furnace. The thickness of the thin film is 1 nm. In a process S111, the temperature is changed from the temperature T1 to T2 (T1<T2), while supplying TMIn and NH<SB>3</SB>to the growth furnace. In a process S112, the temperature is maintained at the temperature T2, while supplying TMIn and NH<SB>3</SB>to the growth furnace. In a process S113, the temperature is changed from the temperature T2 to T1, while supplying TMIn and NH<SB>3</SB>to the growth furnace. The deposited InGaN thin film is reformed by the process S111-S113, the uniformity of the composition of the reformed InGaN thin film is improved. The well layer consists of three layers of the reformed 1 nm InGaN thin film. COPYRIGHT: (C)2010,JPO&INPIT
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