METHODS FOR FABRICATING INTEGRATED CIRCUITS INCLUDING BACK-END-OF-THE-LINE INTERCONNECT STRUCTURES

摘要

Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes selectively depositing a metal layer overlying a metal line of a metallization layer that is disposed in an ILD layer of dielectric material while an upper surface of the ILD layer that is laterally adjacent to the metal line is exposed. A hard mask layer is formed overlying the upper surface of the ILD layer laterally adjacent to the metal layer. The metal layer is removed to expose the metal line while leaving the hard mask layer intact. An interconnect is formed with the metal line adjacent to the hard mask layer.

主权项

1. A method for fabricating an integrated circuit, the method comprising:
selectively depositing a metal layer overlying a metal line of a metallization layer that is disposed in an ILD layer of dielectric material while an upper surface of the ILD layer that is laterally adjacent to the metal line is exposed; forming a hard mask layer overlying the upper surface of the ILD layer laterally adjacent to the metal layer; removing the metal layer to expose the metal line while leaving the hard mask layer intact; and forming an interconnect with the metal line adjacent to the hard mask layer.