| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a quartz glass crucible for pulling a silicon single crystal, the crucible preventing generation of SiO gas from the inner surface of the crucible and preventing generation of an air pocket (bubble defect) in a silicon single crystal. <P>SOLUTION: The quartz glass crucible 10 is characterized in that a high temperature dissolution rate in a center part of the crucible bottom including the projection plane of a silicon single crystal is higher than in the periphery 14 of the center part. Preferably, the high temperature dissolution rate in the center part is increased than in the periphery by incorporating aluminum into an inner surface layer 13 in the center part including the projection plane of the silicon single crystal. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
