| 摘要 |
PROBLEM TO BE SOLVED: To form a punch-through stopper by preventing reduction in channel mobility. SOLUTION: A semiconductor device includes: a semiconductor substrate 100; a semiconductor layer 110 formed on the semiconductor substrate, having a long-side direction and a short-side direction and including a silicon carbide film containing boron and a silicon film which are successively laminated; a gate electrode 150 formed on the short-side direction side face of at least the semiconductor layer 110; source/drain regions 111, 112 formed on the semiconductor layer 110 adjacently to the long-side direction of the gate electrode 150; and an element isolation insulating film 130 formed on the side faces of the semiconductor layer 110 and between the gate electrode 150 and the semiconductor substrate 100. COPYRIGHT: (C)2010,JPO&INPIT
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