| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device of high reliability where a plurality of semiconductor elements each have desired characteristics, and to provide a method for manufacturing semiconductor device that can easily manufacture the semiconductor device. <P>SOLUTION: An electrode metal film M having the thickness of 3 to 30 nm is formed on the entire upper surface of a gate insulating film 6. Next, a 10 nm or less thick n-side cap layer 8A composed of different material from that of the gate electrode metal film M is formed on only the entire portion belonging to the inside of an nFET region Rn out of an upper surface of the gate electrode metal film M. Thermal treatment is performed thereon diffusing an n-side cap layer 8A inside the gate electrode metal film M beneath the n-side cap layer 8A and allowing the former to react with the latter, thereby forming an n-side gate electrode metal film MA inside the nFET region Rn. After the step, a poly Si layer is deposited and gate electrode processing is performed thereon. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
