| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-lead-based perovskite oxide film which contains a Bi-based perovskite oxide normally hardly forming a perovskite type structure or deteriorating in crystallinity, and has superior ferroelectric performance (piezoelectric performance). SOLUTION: The perovskite oxide film is formed on a substrate other than a perovskite oxide single-crystal substrate and contains the perovskite oxide represented by general formula (P1) of A(B<SB>x</SB>, C<SB>1-x</SB>)O<SB>3</SB>. In general formula (P1), 0<x<1.0, A is an A-site element consisting principally of Bi, B is a B-site element consisting principally of an element forming a perovskite structure with A (except Fe), and C is at least one kind of B-site element not or hardly forming a perovskite structure with A. A to C are each one kind of or a plurality of kinds of metal elements. Here, Bi(Fe<SB>x</SB>, Sc<SB>1-x</SB>)O<SB>3</SB>(x=0.5 to 0.9), and Bi(Fe, Co)O<SB>3</SB>are excluded. COPYRIGHT: (C)2010,JPO&INPIT |
