| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching method in which a stable etching rate is obtained. SOLUTION: In the plasma etching method, a substrate W having a mask pattern formed on a surface is etched in a plasma chamber wherein a target material 30 for sputtering is installed, and plasma of an oxygen-based gas is generated in the plasma chamber in or after the etching of the substrate to ash a surface of a target material 30. The process of ashing the surface of the target material is to remove various reaction products generated in the plasma chamber and sticking on the surface of the target material. The process of ashing is carried out in or after the etching to prevent the etching rate from decreasing owing to sputtering of the reaction products deposited on the surface of the target material, thereby obtaining the stable etching rate. COPYRIGHT: (C)2010,JPO&INPIT
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