IMAGE SENSOR

摘要

In an image sensor according to related art, charge information cannot be read at the same time from a pair of photoelectric conversion elements placed corresponding to one microlens. According to one embodiment, an image sensor includes a first photoelectric conversion element and a second photoelectric conversion element placed corresponding to one microlens, a first transfer transistor placed corresponding to the first photoelectric conversion element and a second transfer transistor placed corresponding to the second photoelectric conversion element, a read timing signal line that supplies a common read timing signal to the first transfer transistor and the second transfer transistor, a first output line that outputs a signal of the first photoelectric conversion element to the outside, and a second output line that outputs a signal of the second photoelectric conversion element to the outside.

主权项

1. An image sensor comprising:
a first photoelectric conversion element; a second photoelectric conversion element that is adjacent to the first photoelectric conversion element and receives light entering through a microlens placed in common with the first photoelectric conversion element; a first transfer transistor that reads charge from the first photoelectric conversion element; a second transfer transistor that reads charge from the second photoelectric conversion element; a first read timing signal line that supplies a first read timing signal being common to the first transfer transistor and the second transfer transistor; a first output line that outputs an output signal generated based on charge read through the first transfer transistor; and a second output line that outputs an output signal generated based on charge read through the second transfer transistor.