| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor laser element having a stable horizontal transverse mode. SOLUTION: This nitride-based semiconductor laser element 30 includes a light-emitting element layer 15 formed on a main surface of an n-type GaN substrate 11 and having a light-emitting layer. The light-emitting element layer 15 includes a first side surface 15a formed by a (000-1) plane and a second side surface 15b inclined with respect to the first side surface 15a; and a ridge 35 and a dummy ridge 36, extending perpendicular to a [0001] direction in an in-plane direction of the main surface of the n-type GaN substrate 11, are formed by a region surrounded by the first side surface 15a and the second side surface 15b. COPYRIGHT: (C)2010,JPO&INPIT |
