| 摘要 |
PURPOSE: A light emitting device and a method for fabricating the same are provided to improve the reliability of an emitting device through a stable operation voltage by removing current concentration of an emitting device. CONSTITUTION: In a light emitting device and a method for fabricating the same, an un-doped GaN layer and the first conductivity type semiconductor are formed on a substrate. A semiconductor layer of the second conductive types is formed on the second electrode layer(80). An ohmic electrode layer(70) is formed on the second electrode layer. An active layer(50) is formed on the semiconductor layer of the second conductive types. A current shielding layer(40) is formed on the semiconductor layer of the first conductivity type. The current blocking layer is formed as a multi-layer, and the top, bottom, side of a current block layer is surrounded with the semiconductor layer of the first conductivity type. |
