PLASMA PROCESSING APPARATUS

摘要

A plasma processing apparatus is provided with a substrate stage whereupon a substrate to be processed is arranged; a plasma generating section for generating plasma by using an antenna array; a gas radiating section having a gas radiating plate which is arranged above the antenna array and has a plurality of gas radiating ports; a first gas supply section, which supplies the first material gas by radiating the gas from some of the gas radiating ports on the gas radiating plate toward the surface of the substrate stage so that the gas passes over the surface of the antenna element; and a second gas supply section, which supplies a second material gas by radiating the gas from other gas radiating ports among the gas radiating ports on the gas radiating plate toward the surface of the substrate stage so that the gas passes through a space between the antenna elements. When the first material gas is exposed to the antenna element, the first material gas does not generate an attaching material or generates a smaller quantity of the attaching material compared with a case where a second material gas is used. Thus, film forming speed can be improved and generation of particles can be suppressed.