A process is provided for etching a silicon-containing substrate to form nanowire arrays. In this process, one deposits nanoparticles and a metal film onto the substrate in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. One submerges the metallized substrate into an etchant aqueous solution comprising HF and an oxidizing agent. In this way arrays of nanowires with controlled diameter and length are produced.
申请公布号
WO2009137241(A2)
申请公布日期
2009.11.12
申请号
WO2009US40552
申请日期
2009.04.14
申请人
BANDGAP ENGINEERING, INC.;BUCHINE, BRENT, A.;MODAWAR, FARIS;BLACK, MARCIE, R.
发明人
BUCHINE, BRENT, A.;MODAWAR, FARIS;BLACK, MARCIE, R.