| 摘要 |
PURPOSE: A ferroelectric material is provided to ensure a very high or low value of remanent polarization, compared with existing ferroelectric materials and to be suitable for use as a dielectric material when the ferroelectric material has a higher value of remanent polarization than existing ferroelectric materials and to be suitable for use as a material for a ferroelectric transistor gate when the ferroelectric material has a somewhat lower value than existing ferroelectric materials. CONSTITUTION: A ferroelectric material comprises a mixture consisting of a ferroelectric material and iron(Fe). The ferroelectric material includes at least one of an oxide ferroelectric, polymer ferroelectric, fluoride ferroelectric, and ferroelectric semiconductor. A method for manufacturing a ferroelectric layer using the ferroelectric material comprises the steps of: preparing powder of ferroelectric materials; preparing iron(Fe) powder; mixing and sintering the powder of ferroelectric materials and iron(Fe) powder to form a target; and preparing a ferroelectric layer on a substrate using a target. |
