| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to extend CD(Critical Dimension) of a bottom electrode by forming a sacrificial layer on an etch stop layer and making etch on a lateral of the sacrificial layer when the sacrificial layer is etched. CONSTITUTION: An etch stopping layer(230), an insulating layer(210), and a hard mask layer are formed on a substrate(200). A bottom electrode area exposing the bottom electrode contact plug(220) by etching the hard mask layer, the insulating layer, and etch stopping layer with the bottom electrode mask. A lateral on the sacrificial layer is etched in removing the hard mask layer. The etch stopping layer is formed by the nitride film, and the sacrificial layer is made of the same material as the hard mask layer. The sacrificial layer is a carbon layer.
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