| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of activating semiconductor by which an impurity is introduced effectively and fully into a semiconductor. SOLUTION: When activating from a semiconductor surface layer into which an impurity is implanted to an internal layer, laser beams are irradiated at an energy density which does not fuse the surface layer to activate the surface layer side. Thereafter, the laser beams are irradiated at the higher energy density which does not fuse the surface layer to activate the internal layer side. The surface layer is crystallized by a first irradiation of the laser beams to raise a transmittance of the laser beams. It is possible to activate down to a deeper internal layer effectively without fusing the surface layer or forming an irregularity on the surface, and further it is possible to activate the surface layer side and the internal layer side by only changing the energy density, and to process by a single laser irradiator. COPYRIGHT: (C)2010,JPO&INPIT
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