| 摘要 |
PROBLEM TO BE SOLVED: To reduce the threshold value of a CMIS element in which metal is used for a gate electrode material. SOLUTION: A p-type gate electrode 7 prepared on a gate insulating film 5 of a p-type MIS transistor Qp includes a structure in which a first metal film 30 made up of TiAlN with 10% or more and 50% or less of Al according to the cationic ratio, a second metal film 31 made up of TiN, whose film thickness is 5 nm or less, and a conductor film 32 including Si as a principal component are laminated in this order. Furthermore, an n-type gate electrode 6 prepared on the gate insulating film 5 of an n-type MIS transistor Qn includes a structure in which the second metal film 31 and the conductor film 32 are laminated in this order. COPYRIGHT: (C)2010,JPO&INPIT
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