| 摘要 |
PURPOSE: A high density plasma chemical vapor deposition apparatus is provided to improve uniformity of a process by rotating a gas distribution ring installed in a side gas supply nozzle. CONSTITUTION: A high density plasma chemical vapor deposition apparatus includes a process chamber(100), a substrate support(200), a top gas supply nozzle(300), a side gas supply nozzle(400), and a plasma generator(500). The process chamber is comprised of a chamber body and a chamber cover covering the opened surface of the chamber body. The process chamber provides the space for the process. The substrate support supports the substrate inside the process chamber. The top gas supply nozzle is formed in the upper side of the process chamber and sprays the process gas into the process chamber. The side gas supply nozzle is installed in the gas distribution ring and sprays the process gas to the process chamber in the side of the process chamber. The plasma generator excites the process gas to the plasma state. The distribution ring changes the position of the side gas supply nozzles by the rotation.
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