发明名称 |
NAND based NMOS NOR flash memory cell, a NAND based NMOS nor flash memory array, and a method of forming a NAND based NMOS NOR flash memory array |
摘要 |
A NOR flash nonvolatile memory device provides the memory cell size and a low current program process of a NAND flash nonvolatile memory device and the fast, asynchronous random access of a NOR flash nonvolatile memory device. The NOR flash nonvolatile memory device has an array of NOR flash nonvolatile memory circuits. Each NOR flash nonvolatile memory circuit includes a plurality of charge retaining transistors serially connected in a NAND string. A drain of a topmost charge retaining transistor is connected to a bit line associated with the serially connected charge retaining transistors and a source of a bottommost charge retaining transistor is connected to a source line associated with the charge retaining transistors. Each control gate of the charge retaining transistors on each row is commonly connected to a word line. The charge retaining transistors are programmed and erased with a Fowler-Nordheim tunneling process.
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申请公布号 |
US2009279360(A1) |
申请公布日期 |
2009.11.12 |
申请号 |
US20090387771 |
申请日期 |
2009.05.07 |
申请人 |
APLUS FLASH TECHNOLOGY, INC. |
发明人 |
LEE PETER WUNG;HSU FU-CHANG;TSAO HSING-YA |
分类号 |
G11C16/04;G11C16/06;H01L21/00 |
主分类号 |
G11C16/04 |
代理机构 |
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