| 摘要 |
In the present invention, in forming a LaB6 thin film by sputtering, the single-crystal properties in the wide domain direction in the obtained LaB6 thin film is improved. In one embodiment of the present invention, high frequency power from a high frequency power supply, and first direct current power after high frequency components from a first direct current power supply are cut are applied to a target, and direct current power from a second direct current power supply is applied to a substrate holder during the application of the high frequency power and the first direct current power.
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