发明名称 MICROWAVE DEVICE, HIGH FREQUENCY DEVICE AND HIGH FREQUENCY APPARATUS
摘要 <p>Since the loss of the conventional microwave device is large, when this device is applied to the microwave component, there are problems; for example, a low-noise amplifier, the noise figure is degraded, and when applied to a high-output amplifier, output and efficiency may be decreased. In particular, in the high-output amplifier of over 100 W class, heat generation at a capacitor which forms the microwave device increases, which causes a problem that the reliability of the microwave device may be decreased. A structure is formed to include a capacitor loaded between two high impedance lines the length of which has 1/4 wavelength in the desired frequency band and the characteristic impedance is higher than 50 ©.</p>
申请公布号 EP2117070(A1) 申请公布日期 2009.11.11
申请号 EP20080704134 申请日期 2008.01.30
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 SEINO, KIYOHARU;HUNADA, MASAHIKO
分类号 H01P1/00;H01P5/02;H03F3/60 主分类号 H01P1/00
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