| 摘要 |
A method for forming a shallow junction in a semiconductor wafer may include amorphizing the wafer to obtain a depth of end-of-range (EOR) defects that is smaller than a desired junction depth in a range of about 13 nm to about 50 nm, implanting a dopant material into the wafer at a selected dose and energy to produce the desired junction depth, and activating the dopant material by thermal processing of the semiconductor wafer at a selected temperature for a selected time consistent with low-temperature solid phase epitaxy (SPE) annealing to form the shallow junction. The control of the EOR depth through a preamorphizing implant to less than the junction depth provides for a low leakage junction and the low-temperature SPE anneal prevents diffusion of the dopant beyond the desired junction depth. |
