发明名称 Design Methodology for MuGFET ESD Protection Devices
摘要 A method for designing a MuGFET ESD protection device, which has a given general layout and is to be manufactured by means of a given manufacturing process. Multiple interdependent layout and process parameters are determined of which a first set are fixed by the manufacturing process and a second set are to be determined in view of a desired ESD performance of the device. The method comprises the following steps: (a) defining ESD constraints for the device on the basis of the desired ESD performance; (b) selecting among the second set of interdependent parameters a subset of at least one parameter to be optimized; (c) determining for each parameter of the subset a relationship with the other parameters of the second set which do not belong to the subset; (d) determining for each parameter of the subset an optimum value on the basis of the respective relationship determined in step (c), the defined ESD constraints and possible other desired specifications of the device, and (e) determining the other parameters of the second set on the basis of the relationships determined in step (c) by imposing the/each optimum value determined in step (d).
申请公布号 EP2117045(A1) 申请公布日期 2009.11.11
申请号 EP20080156029 申请日期 2008.05.09
申请人 IMEC 发明人 THIJS, STEVEN;LINTEN, DIMITRI;TREMOUILLES, DAVID
分类号 H01L27/02 主分类号 H01L27/02
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