| 摘要 |
<p>In the present invention a sub-stoichiometric ceramic ZnO x : Al target, with 0.3 < x < 1, is used for depositing a ZnO: Al layer in a reactive sputtering process. The process is carried out in an Ar/O 2 atmosphere. The diagram depicts the deposition rate R depending on the oxygen flow in a sputtering process according to the present invention compared with a conventional sputter process using a stoichiometric ZnO target. The upper line x < 1 indicates the deposition rate R when using the inventive target and process. The lower line x = 1, for comparison only, indicates the deposition rate R when using a stoichiometric ceramic ZnO target. It can be seen from the diagram that both processes are quite stable as there are no steep slopes when varying the oxygen flow. However, the line x<1 is above the line x=1. Therefore, a working point P may be selected which has a higher deposition rate R than a corresponding working point P' of a corresponding ceramic target. A higher deposition rate, however, entails a lower bombardment of the deposited layer with oxygen ions. Therefore, the quality of the ZnO: Al layer is improved as far as the conductivity and the etchability of the layer are concerned.</p> |
