IN VIVO DOSIMETRY DEVICE

摘要

#CMT# #/CMT# The probe (1) has a radio luminescent material (3) e.g. direct gap or indirect gap solid semi-conductor material, transmitting a luminescence signal whose intensity is function of high energy radiation (M) e.g. X-rays, which radiates the material, where the material is in form of doped or intrinsic monocrystalline material. An optical fiber (4) receives the signal and ensures its transmission towards a photodetector (6) of a luminescence detection system (7). The material is placed in a converting cell (2) i.e. radioelectrical type converting cell, which is assembled at an end of the fiber. #CMT#USE : #/CMT# Miniaturized probe for measuring a dose of a high energy radiation on a voluntarily irradiated anatomical region or radiosensitive peripheral anatomical region, for verifying delivered dose and estimating an impact of the radiation in the region, in a radiation measuring device (claimed) i.e. medical or in-vivo dosimetry device, for radiotheraphy or radiodiagnostic applications. Uses include but are not limited to X-rays, gamma rays, electron, positron and other high energy particle. #CMT#ADVANTAGE : #/CMT# The configuration of the probe permits to measure the dose of high energy radiation that radiates the radio luminescent material, in real time and in a reliable and safe manner. The probe can be manufactured in an inexpensive manner and ensures disposable character. The configuration of the probe permits to ensure a single usage invasive probe, to free from an electrical connection between a detection cell and the photodetector and to improve sensitivity of a dosimetry device. The size of the probe is reduced. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a schematic view of a miniaturized probe. M : High energy radiation 1 : Miniaturized probe 2 : Converting cell 3 : Radio luminescent material 4 : Optical fiber 6 : Photodetector 7 : Luminescence detection system #CMT#INORGANIC CHEMISTRY : #/CMT# The direct gap semiconductor material is chosen from arsenic gallium (AsG), gallium nitride (GaN), cadmium telluride (CdTe), gallium aluminum arsenide (GaAlAs), aluminum gallium indium nitride (AlGaInN) and indium gallium nitride (InGaN). The indirect gap semiconductor material is chosen from silicon carbide (SiC), gallium phosphide (GaP) and gallium arsenic phosphide (GaAsP).