| 摘要 |
PURPOSE: A nitride light emitting device and a manufacturing method thereof are provided to implement a high and reliable emitting device by forming a buffer layer between a substrate and a nitride semiconductor. CONSTITUTION: In a nitride light emitting device and a manufacturing method thereof, a nitride semiconductor layer(204) is formed on a substrate(200). A buffer layer(202) is formed between the substrate and the nitride semiconductor layer, and a growth temperature of the buffer layer is between 400°C and 800°C. The thickness of the buffer layer is within 5 and 100nm. The buffer is composed of a first buffer and a second buffer on the first buffer, and the thickness of the second buffer layers is within 0 and 5,000nm. |
