发明名称
摘要 To solve the foregoing problems, provided is a ZnO-based semiconductor element having an entirely novel function distinct from hitherto, using a ZnO-based semiconductor and organic matter for an active role. An organic electrode 2 is formed on a ZnO-based semiconductor 1, and an Au film 3 is formed on the organic electrode 2. An electrode formed of a multilayer metal film including a Ti film 4 and an Au film 5 is formed on the back surface of the ZnO-based semiconductor 1 so as to be opposed to the organic electrode 2. A bonding interface between the organic electrode 2 and the ZnO-based semiconductor 1 is in a pn junction-like state. Thus, rectification occurs therebetween.
申请公布号 JP4362635(B2) 申请公布日期 2009.11.11
申请号 JP20080021953 申请日期 2008.01.31
申请人 发明人
分类号 H01L21/28;H01L21/338;H01L29/423;H01L29/47;H01L29/778;H01L29/812;H01L29/872;H01L31/10 主分类号 H01L21/28
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