GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same,申请号EP20040014870-传众专利搜索

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发明名称	GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same
摘要
申请公布号	EP1492158(A3)	申请公布日期	2009.11.11
申请号	EP20040014870	申请日期	2004.06.24
申请人	SUMITOMO ELECTRIC INDUSTRIES, LTD.	发明人	AKITA, KATSUSHI;TAKASUKA, EIRYO;NAKAYAMA, MASAHIRO;UENO, MASAKI;MIURA, KOUHEI;KYONO, TAKASHI
分类号	H01L21/20;H01L33/06;C30B25/02;C30B25/18;C30B29/38;H01L21/205;H01L29/20;H01L33/32	主分类号	H01L21/20
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