METHOD FOR FORMING A PATTERN IN SEMICONDUCTOR DEVICE AND METHOD FOR FORMING A TRANSISTOR USING THE SAME

摘要

PURPOSE: A method for forming a pattern of a semiconductor device and a method for forming a transistor using the same are provided to obtain high operation speed and reliability by forming a capping layer along a conductive film pattern and a surface of the substrate with an atom layer stacking method. CONSTITUTION: A conductive film is formed on a substrate(100). A conductive film pattern(110) is formed by patterning the conductive film. An oxide layer(112) is formed on a part of the conductive film pattern and the substrate by heating the conductive film pattern. A capping layer(114) is formed along the surface of the substrate and the conductive film pattern with the atom layer stacking method. The conductive layer is formed by stacking a polysilicon layer(102a) and a metal layer. The metal layer(104a) is formed between the polysilicon layer and the metal layer.