NON-VOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A nonvolatile memory device and a manufacturing method thereof are provided to minimize a volume of a memory cell and increase an operation speed by combining a flash memory with an SONOS structure and a phase change nonvolatile memory. CONSTITUTION: An insulation layer(510) is formed on a substrate(500) and prevents the charge trapped in a charge trapping layer(520) from being induced to the substrate. The charge trapping layer is formed in the insulation layer and traps the charge. A plurality of phase change layers(532-1,532-2,532-3) control the flow and outflow of the charge between the charge trapping layer and a gate electrode layer(540). The gate electrode layer changes the state of the phase change layer according to the intensity of the current or voltage and the application time from the outside. The state of the phase change layer is the crystalline state or amorphous state. The gate electrode layer is made of aluminum or aluminum alloy.