| 摘要 |
According to an embodiment of this invention, a semiconductor element comprises: a growth substrate; a first buffer layer having the composition RexSiy(0=x=2, 0=y=2), on the growth substrate; and a group 3 nitride-based single-crystal semiconductor layer having the composition InxAlyGa1-x-yN(0=x, 0=y, x+y=1), on the buffer layer.
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