发明名称 METHOD FOR FABRICATING SAPPHIRE SUBSTRATE OF HIGH EFFICIENCY LIGHT EMITTING DIODE
摘要 PURPOSE: A method for manufacturing a sapphire substrate for a light emitting diode with high efficiency is provided to improve yield and reduce a manufacturing cost of the light emitting diode by forming a preset pattern on the sapphire substrate using a nano imprint process. CONSTITUTION: A resin layer(110) is formed on a substrate(100). A mask layer is formed on the substrate using a mold(120) with a preset pattern. The substrate is etched using a mask layer. The mask layer is removed. A method for forming the mask layer includes a thermal imprint method or UV imprint method. The preset pattern includes a plurality of trapezoids or rectangular blocks(111,121).
申请公布号 KR20090116212(A) 申请公布日期 2009.11.11
申请号 KR20080042015 申请日期 2008.05.06
申请人 LEE, HEON 发明人 LEE, HEON
分类号 H01L21/20 主分类号 H01L21/20
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