发明名称
摘要 <p>In the semiconductor integrated circuit, an auxiliary conductor is formed in a wiring layer beneath a signal wire which connects a position Vin estimated to generate static electricity and a position Vout to be protected from static electricity. The capacitance of a glass substrate can be reduced to 1/1000 of the capacitance of the interlayer insulating film. Accordingly, even if a voltage of 1000 to 2000 V is generated between a substrate conveying system and the auxiliary conductor, the glass substrate works as a dielectric, and the voltage generated between the auxiliary conductor and signal wire is only several volts.</p>
申请公布号 JP4360733(B2) 申请公布日期 2009.11.11
申请号 JP20000062508 申请日期 2000.03.07
申请人 发明人
分类号 G02F1/1345;G02F1/1368;G02F1/133;G02F1/136;H01L21/822;H01L23/62;H01L27/04;H05F3/02 主分类号 G02F1/1345
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