| 摘要 |
<p>A method of fabricating a sheet of semiconductor material is provided. The method includes forming a first layer (30) of silicon powder that has a lower surface (36) and an opposite upper surface (38). The method also includes depositing a second layer (32) of silicon powder across the upper surface of the first layer, wherein the second layer of silicon powder has a lower surface (44) and an opposite upper surface (46) and has a lower melting point than the first layer (30) of silicon powder. The method also includes heating at least one of the first and second layers of silicon powder to initiate a controlled melt of at least one of the first (30) and second (32) layers of silicon powder, and cooling at least one of the first and second layers of silicon powder to initiate crystallization of at least one of the first (30) and second (32) layers of silicon powder.</p> |
