| 摘要 |
PURPOSE: An SOI device and a manufacturing method thereof are provided to improve sensing margin by improving the charge storage performance by forming an epitaxial silicon layer to fill the groove including an insulation layer after forming the insulation layer. CONSTITUTION: A buried insulation layer(102) and a silicon layer(104) are formed on a silicon substrate(100). The insulation layer is formed on a sidewall of the groove lower part. An epitaxial silicon layer(112) is formed by filing the groove including the insulation layer. A gate(120) is formed on the epitaxial silicon layer. A junction region(124) is formed in the silicon layer of both sides of the gate. The buried insulation layer is comprised of an oxide layer.
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