发明名称 |
Damascene process for carbon memory element with MIIM diode |
摘要 |
Forming a metal-insulator diode and carbon memory element in a single damascene process is disclosed. A trench having a bottom and a sidewall is formed in an insulator. A first diode electrode is formed in the trench during a single damascene process. A first insulating region comprising a first insulating material is formed in the trench during the single damascene process. A second insulating region comprising a second insulating material is formed in the trench during the single damascene process. A second diode electrode is formed in the trench during the single damascene process. The first insulating region and the second insulating region reside between the first diode electrode and the second diode electrode to form a metal-insulator-insulator-metal (MIIM) diode. A region of carbon is formed in the trench during the single damascene process. At least a portion of the carbon is electrically in series with the MIIM diode.
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申请公布号 |
US7615439(B1) |
申请公布日期 |
2009.11.10 |
申请号 |
US20080240758 |
申请日期 |
2008.09.29 |
申请人 |
SANDISK CORPORATION |
发明人 |
SCHRICKER APRIL DAWN;SEKAR DEEPAK C.;FU ANDY;CLARK MARK |
分类号 |
H01L21/8234 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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