发明名称 |
Structure and method for fabricating self-aligned metal contacts |
摘要 |
A semiconductor structure including at least one transistor is provided which has a stressed channel region that is a result of having a stressed layer present atop a gate conductor that includes a stack comprising a bottom polysilicon (polySi) layer and a top metal semiconductor alloy (i.e., metal silicide) layer. The stressed layer is self-aligned to the gate conductor. The inventive structure also has a reduced external parasitic S/D resistance as a result of having a metallic contact located atop source/drain regions that include a surface region comprised of a metal semiconductor alloy. The metallic contact is self-aligned to the gate conductor.
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申请公布号 |
US7615831(B2) |
申请公布日期 |
2009.11.10 |
申请号 |
US20070925168 |
申请日期 |
2007.10.26 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ZHU HUILONG;RAUSCH WERNER |
分类号 |
H01L31/119 |
主分类号 |
H01L31/119 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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