发明名称 Semiconductor memory device improved in data writing
摘要 A bit line is shared by first and second NAND units. First and second selection transistors are connected in series between the bit line and the first NAND unit. Third and fourth selection transistors are connected in series between the bit line and the second NAND unit. A control unit changes a first and second signals and a potential of the bit line from a first level to a second level higher than a first level, and changes the potential of the bit line from the second level to the first level after changing the first signal from the second level to the first level.
申请公布号 US7616491(B2) 申请公布日期 2009.11.10
申请号 US20070738636 申请日期 2007.04.23
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KAMIGAICHI TAKESHI;SHIROTA RIICHIRO
分类号 G11C16/04 主分类号 G11C16/04
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