发明名称 |
HDP/PECVD methods of fabricating stress nitride structures for field effect transistors |
摘要 |
A stress nitride structure is formed on an integrated circuit field effect transistor by high density plasma (HDP) depositing a first stress nitride layer on the integrated circuit field effect transistor and then plasma enhanced chemical vapor depositing (PECVD) a second stress nitride layer on the first stress nitride layer. The first stress nitride layer is non-conformal and the second stress nitride layer is conformal. Related structures also are described.
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申请公布号 |
US7615432(B2) |
申请公布日期 |
2009.11.10 |
申请号 |
US20050264865 |
申请日期 |
2005.11.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KIM JUNJUNG;PARK JAE-EUN;KU JA-HUM;YANG DAEWON |
分类号 |
H01L21/8238;H01L21/3205;H01L21/336;H01L21/469;H01L21/4763;H01L21/8234 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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地址 |
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